Description
| Form Factor | M.2 2280 |
| Capacity | 1TB |
| Memory Components | Samsung V-NAND |
| Interface | PCI-Express Gen 4.0 x4, NVMe 1.3 |
| Max Sequential Read | Up to 7000 MBps |
| Max Sequential Write | Up to 5000 MBps |
| 4KB Random Read | QD1: Up to 22,000 IOPS |
| QD32: Up to 1,000,000 IOPS | |
| 4KB Random Write | QD1: Up to 22,000 IOPS |
| QD32: Up to 1,000,000 IOPS | |
| Features | Reliability (TBW): 600TBW |
| Height | 2.30mm |
| Width | 22.00mm |
| Depth | 80.00mm |
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